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| SMD Type NPN Silicon Transistor KST9018 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 IC Transistors Unit: mm o Features +0.1 2.4-0.1 nHigh current gain bandwidth product. npower dissipation.(PC=200mW) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector oAbsolute Maximum Ratings Ta = 25ae Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 15 5 50 200 150 -55 to 150 Unit V V V mA mW ae ae Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current to Continuous Collector Power Dissipation Junction Temperature Storage Temperature oElectrical Characteristics Ta = 25ae Symbol Testconditons Min 30 15 5 0.05 0.1 70 190 0.5 1.4 600 V V MHz Typ Max Unit V V V |I A |I A A, V(BR)CBO IC= 100|I IE=0 V(BR)CEO IC= 1mA, IB=0 A, V(BR)EBO IE=100|I IC=0 ICBO IEBO hFE VCE(sat) VBE(sat) fT VCB=12V, IE=0 VEB= 3V, IC=0 VCE=5V, IC= 1mA IC=10mA, IB= 1mA IC=10mA, IB= 1mA VCE=5V, IC= 5mA,f=400MHz Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cut to off current Emitter cut to off current DC current gain Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency oMarking Marking J8 0-0.1 www.kexin.com.cn 1 |
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